v rrm = 400 v - 600 v i f = 25 a features ? high surge capability do-4 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol mur2540 (r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 280 v silicon super fast recover y diode MUR2560 (r) 600 420 ? types from 400 v to 600 v v rrm 2. reverse polarity (r): stud is anode. mur2540 thru MUR2560r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions dc blocking voltage v dc 400 v continuous forward current i f 25 a operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol mur2540 (r) unit diode forward voltage 1.3 10 a 3ma recovery time maximum reverse recovery time t rr 75 ns 600 25 500 -55 to 150 -55 to 150 1.7 MUR2560 (r) reverse current i r v f a v r = 50 v, t j = 25 c i f = 25 a, t j = 25 c t c 145 c conditions 500 t c = 25 c, t p = 8.3 ms 10 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm i f =0.5 a, i r =1.0 a, i rr = 0.25 a v r = 50 v, t j = 125 c v 3 90 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
mur2540 thru MUR2560r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mur2540 thru MUR2560r do- 4 (do-203aa) j g f a e d p n b c m inches millimeters min max min max a 10-32 unf b 0.424 0.437 10.77 11.10 c ----- 0.505 ----- 12.82 d ------ 0.800 ----- 20.30 e 0.453 0.492 11.50 12.50 f 0.114 0.140 2.90 3.50 g ----- 0.405 ----- 10.29 j ----- 0.216 ----- 5.50 m ----- 0.302 ----- 7.68 n 0.031 0.045 0.80 1.15 p 0.070 0.79 1.80 2.00 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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